中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm

文献类型:期刊论文

作者Xu, Cheng1,2; Yao, Jianke1,2; Ma, Jianyong1,2; Jin, Yunxia1; Shao, Jianda1
刊名Chinese optics letters
出版日期2007-12-10
卷号5期号:12页码:727-729
ISSN号1671-7694
通讯作者Xu, cheng(xucheng@siom.ac.cn)
英文摘要Ta2o5 films were prepared with conventional electron beam evaporation and annealed in o-2 at 673 k for 12 h. laser-induced damage thresholds (lidts) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. the results showed that the lidts in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. in addition, in n-on-1 regime, the lidt increased with the increase of wavelength. furthermore, both the optical property and lidt of ta2o5 films were influenced by annealing in o-2.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; OPTICAL COATINGS ; THIN-FILMS
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000255024500015
出版者SCIENCE CHINA PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2382377
专题中国科学院大学
通讯作者Xu, Cheng
作者单位1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, R&D Ctr Opt Thin Film Coating, Shanghai 201800, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Xu, Cheng,Yao, Jianke,Ma, Jianyong,et al. Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm[J]. Chinese optics letters,2007,5(12):727-729.
APA Xu, Cheng,Yao, Jianke,Ma, Jianyong,Jin, Yunxia,&Shao, Jianda.(2007).Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm.Chinese optics letters,5(12),727-729.
MLA Xu, Cheng,et al."Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm".Chinese optics letters 5.12(2007):727-729.

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