Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm
文献类型:期刊论文
作者 | Xu, Cheng1,2; Yao, Jianke1,2; Ma, Jianyong1,2; Jin, Yunxia1; Shao, Jianda1 |
刊名 | Chinese optics letters
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出版日期 | 2007-12-10 |
卷号 | 5期号:12页码:727-729 |
ISSN号 | 1671-7694 |
通讯作者 | Xu, cheng(xucheng@siom.ac.cn) |
英文摘要 | Ta2o5 films were prepared with conventional electron beam evaporation and annealed in o-2 at 673 k for 12 h. laser-induced damage thresholds (lidts) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. the results showed that the lidts in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. in addition, in n-on-1 regime, the lidt increased with the increase of wavelength. furthermore, both the optical property and lidt of ta2o5 films were influenced by annealing in o-2. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; OPTICAL COATINGS ; THIN-FILMS |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
WOS记录号 | WOS:000255024500015 |
出版者 | SCIENCE CHINA PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2382377 |
专题 | 中国科学院大学 |
通讯作者 | Xu, Cheng |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, R&D Ctr Opt Thin Film Coating, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, Cheng,Yao, Jianke,Ma, Jianyong,et al. Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm[J]. Chinese optics letters,2007,5(12):727-729. |
APA | Xu, Cheng,Yao, Jianke,Ma, Jianyong,Jin, Yunxia,&Shao, Jianda.(2007).Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm.Chinese optics letters,5(12),727-729. |
MLA | Xu, Cheng,et al."Laser-induced damage threshold in n-on-1 regime of ta2o5 films at 532, 800, and 1064 nm".Chinese optics letters 5.12(2007):727-729. |
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来源:中国科学院大学
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