中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages

文献类型:期刊论文

作者Wu, Weiping1,2; Liu, Yunqi1; Wang, Ying1,2; Xi, Hongxia1,2; Gao, Xike1,2; Di, Chongan1,2; Yu, Gui1; Xu, Wei1; Zhu, Daoben1
刊名Advanced functional materials
出版日期2008-03-11
卷号18期号:5页码:810-815
ISSN号1616-301X
DOI10.1002/adfm.200701125
通讯作者Wu, weiping()
英文摘要Organic field-effect transistors suffer from ultra-high operating voltages in addition to their relative low mobility. a general approach to low-operating-voltage organic field-effect transistors (ofets) using donor/acceptor buffer layers is demonstrated. p-type ofets with acceptor molecule buffer layers show reduced operating voltages (from 60-100 v to 10-20 v), with mobility up to 0.19 cm(2) v-1 s(-1) and an on/off ratio of 3 x 10(6). the subthreshold slopes of the devices are greatly reduced from 5-12 v/decade to 1.68-3 v/decade. this favorable combination of properties means that such ofets can be operated successfully at voltages below 20 v (vertical bar v-ds vertical bar <= 20 v, vertical bar v-gs vertical bar <= 20 v ). this method also works for n-type semiconductors. the reduced operating voltage and low pinch-off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes.
WOS关键词THRESHOLD VOLTAGE ; THIN-FILMS ; GATE-DIELECTRICS ; PENTACENE ; IDENTIFICATION ; INSULATOR ; CIRCUITS
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000254448400017
出版者WILEY-V C H VERLAG GMBH
URI标识http://www.irgrid.ac.cn/handle/1471x/2392189
专题中国科学院大学
通讯作者Wu, Weiping
作者单位1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China
2.Grad Univ, Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Wu, Weiping,Liu, Yunqi,Wang, Ying,et al. High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages[J]. Advanced functional materials,2008,18(5):810-815.
APA Wu, Weiping.,Liu, Yunqi.,Wang, Ying.,Xi, Hongxia.,Gao, Xike.,...&Zhu, Daoben.(2008).High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages.Advanced functional materials,18(5),810-815.
MLA Wu, Weiping,et al."High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages".Advanced functional materials 18.5(2008):810-815.

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来源:中国科学院大学

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