Vertical structure p-type permeable metal-base organic transistors based on n,n '-diphentyl-n,n '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine
文献类型：期刊论文
| 作者 | Huang, Jinying1; Yi, Mingdong1; Ma, Dongge1; Hummelgen, Ivo A.2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-06-09 |
| 卷号 | 92期号:23页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2944880 |
| 通讯作者 | Ma, dongge(mdg1014@ciac.jl.cn) |
| 英文摘要 | In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. a hole-type organic semiconductor n,n(')-diphentyl-n,n(')-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. in the permeable-base transistors, the metal base was formed by firstly coevaporating al and ca in vacuum and then annealing at 120 degrees c for 5 min in air, followed by a thin al deposition. these devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270. (c) 2008 american institute of physics. |
| WOS关键词 | THIN-FILM-TRANSISTOR ; CURRENT GAIN ; ARCHITECTURE ; EMITTER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256706000038 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2392578 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | 1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Huang, Jinying,Yi, Mingdong,Ma, Dongge,et al. Vertical structure p-type permeable metal-base organic transistors based on n,n '-diphentyl-n,n '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine[J]. Applied physics letters,2008,92(23):3. |
| APA | Huang, Jinying,Yi, Mingdong,Ma, Dongge,&Hummelgen, Ivo A..(2008).Vertical structure p-type permeable metal-base organic transistors based on n,n '-diphentyl-n,n '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine.Applied physics letters,92(23),3. |
| MLA | Huang, Jinying,et al."Vertical structure p-type permeable metal-base organic transistors based on n,n '-diphentyl-n,n '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine".Applied physics letters 92.23(2008):3. |
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来源：中国科学院大学
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