Photovoltaic effect in a photon storage cell
文献类型：期刊论文
| 作者 | Bian, SB; Li, GR; Yan, T; Bing, H; Li, YX; Yang, FH; Zheng, HZ |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2004-04-01 |
| 卷号 | 23期号:3页码:205-207 |
| 关键词 | Photonic storage Photovoltaic effect I-v curves |
| ISSN号 | 1001-9014 |
| 通讯作者 | Bian, sb() |
| 英文摘要 | The response of photonic memory effect in i-v characteristics of a specially designed photonic memory cell was reported. when the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. a set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. it is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. its time constant is a measure of photonic memory time. |
| WOS关键词 | QUANTUM DOTS ; WELL |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000222316000012 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426186 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bian, SB |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bian, SB,Li, GR,Yan, T,et al. Photovoltaic effect in a photon storage cell[J]. Journal of infrared and millimeter waves,2004,23(3):205-207. |
| APA | Bian, SB.,Li, GR.,Yan, T.,Bing, H.,Li, YX.,...&Zheng, HZ.(2004).Photovoltaic effect in a photon storage cell.Journal of infrared and millimeter waves,23(3),205-207. |
| MLA | Bian, SB,et al."Photovoltaic effect in a photon storage cell".Journal of infrared and millimeter waves 23.3(2004):205-207. |
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来源：半导体研究所
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