Parameters determining crystallinity in beta-sic thin films prepared by catalytic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao, Q; Li, JC; Zhou, H; Wang, H; Wang, B; Yan, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-01-02 |
| 卷号 | 260期号:1-2页码:176-180 |
| 关键词 | Catalytic chemical vapor deposition Chemical vapor deposition processes |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.08.026 |
| 通讯作者 | Zhao, q() |
| 英文摘要 | The effects of deposition gas pressure and h-2 dilution ratio (h-2/sih4+ch4+h-2), generally considered two of dominant parameters determining crystallinity in beta-sic thin films prepared by catalytic chemical vapor deposition (cat-cvd), often called hot-wire cvd method, on the films properties have been systematically studied. as deposition gas pressure increase from 40 to 1000 pa, the crystallinity of the films is improved. from the study of h-2 dilution ratio, it is considered that h-2 plays a role as etching gas and modulating the phases in beta-sic thin films. on the basis of the study on the parameters, nanocrystalline beta-sic films were successfully synthesized on si substrate at a low temperature of 300degreesc. the fourier transform infrared spectroscopy (ftir) and x-ray diffraction (xrd) spectra show formation of beta-sic. moreover, according to sherrer equation, the average grain size of the films estimated is in nanometer-size. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | AMORPHOUS-SILICON |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000187730000028 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426223 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Q |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Beijing Univ Technol, China Minist Educ, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Li, JC,Zhou, H,et al. Parameters determining crystallinity in beta-sic thin films prepared by catalytic chemical vapor deposition[J]. Journal of crystal growth,2004,260(1-2):176-180. |
| APA | Zhao, Q,Li, JC,Zhou, H,Wang, H,Wang, B,&Yan, H.(2004).Parameters determining crystallinity in beta-sic thin films prepared by catalytic chemical vapor deposition.Journal of crystal growth,260(1-2),176-180. |
| MLA | Zhao, Q,et al."Parameters determining crystallinity in beta-sic thin films prepared by catalytic chemical vapor deposition".Journal of crystal growth 260.1-2(2004):176-180. |
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来源：半导体研究所
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