Annealing ambient controlled deep defect formation in inp
文献类型：期刊论文
| 作者 | Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN |
| 刊名 | European physical journal-applied physics
 |
| 出版日期 | 2004-07-01 |
| 卷号 | 27期号:1-3页码:167-169 |
| ISSN号 | 1286-0042 |
| DOI | 10.1051/epjap:2004096 |
| 通讯作者 | Zhao, yw(zhaoyw@red.semi.ac.nc) |
| 英文摘要 | Deep defects in annealed inp have been investigated by deep level transient capacitance spectroscopy (dlts), photo induced current transient spectroscopy (picts) and thermally stimulated current spectroscopy (tsc). both dlts results of annealed semiconducting inp and picts and tsc results of annealed semi-insulating inp indicate that inp annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. the correlation of the defects and the nature of the defects in annealed inp are discussed based on the results. |
| WOS关键词 | FE-DOPED INP ; SEMIINSULATING INP ; POINT-DEFECTS ; PRESSURE ; WAFERS ; TRAPS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000224559500033 |
| 出版者 | E D P SCIENCES |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426259 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, YW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, ZY,Duan, ML,et al. Annealing ambient controlled deep defect formation in inp[J]. European physical journal-applied physics,2004,27(1-3):167-169. |
| APA | Zhao, YW.,Dong, ZY.,Duan, ML.,Sun, WR.,Zeng, YP.,...&Sun, TN.(2004).Annealing ambient controlled deep defect formation in inp.European physical journal-applied physics,27(1-3),167-169. |
| MLA | Zhao, YW,et al."Annealing ambient controlled deep defect formation in inp".European physical journal-applied physics 27.1-3(2004):167-169. |
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来源：半导体研究所
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