Silica and alumina thin films grown by liquid phase deposition
文献类型：期刊论文
| 作者 | Sun, J; Hu, LZ; Wang, ZY; Du, GT |
| 刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
 |
| 出版日期 | 2005 |
| 卷号 | 475-479页码:1725-1728 |
| 关键词 | Silica Alumina Liquid phase deposition Semiconductors |
| ISSN号 | 0255-5476 |
| 通讯作者 | Sun, j(albertjefferson@sohu.com) |
| 英文摘要 | This work demonstrates the condition optimization during liquid phase deposition (lpd) of sio2/gaas films. lpd method is further applied to form al2o3 films on semiconductors with poison-free materials. proceeding at room temperature with inexpensive equipment, lpd of silica and alumina films is potentially serviceable in microelectronics and related spheres. |
| WOS关键词 | ELECTRICAL CHARACTERISTICS ; DIOXIDE FILMS ; OXIDE-FILMS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227494702015 |
| 出版者 | TRANS TECH PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426263 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, J |
| 作者单位 | 1.Dalian Univ Technol, Dept Phys, Dalian 116023, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Jilin Univ, Coll Elect Sci & Engn, Changchun 130023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, J,Hu, LZ,Wang, ZY,et al. Silica and alumina thin films grown by liquid phase deposition[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1725-1728. |
| APA | Sun, J,Hu, LZ,Wang, ZY,&Du, GT.(2005).Silica and alumina thin films grown by liquid phase deposition.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1725-1728. |
| MLA | Sun, J,et al."Silica and alumina thin films grown by liquid phase deposition".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1725-1728. |
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来源：半导体研究所
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