Analog-digital and digital-analog converters using single-electron and mos transistors
文献类型：期刊论文
| 作者 | Ou, XB; Wu, NJ |
| 刊名 | Ieee transactions on nanotechnology
 |
| 出版日期 | 2005-11-01 |
| 卷号 | 4期号:6页码:722-729 |
| 关键词 | Analog-digital conversion (adc) Circuit Digital-analog conversion (dac) Hybrid Metal-oxide-semiconductor (mos) Single-electron transistor (set) Spice |
| ISSN号 | 1536-125X |
| DOI | 10.1109/tnano.2005.858600 |
| 通讯作者 | Ou, xb(xiaobin@red.semi.ac.cn) |
| 英文摘要 | This paper proposes two kinds of novel single-electron analog-digital conversion (adc) and digital-analog conversion (dac) circuits that consist of single-electron transistors (sets) and metal-oxide-semiconductor (mos) transistors. the set/mos hybrid adc and dac circuits possess the merits of the set circuit and the mos circuit. we obtain the spice macro-modeling code of the set transistor by studying and fitting the characteristics of the set with spice simulation and monte carlo simulation methods. the spice macro-modeling code is used for the simulation of the set/mos hybrid adc and dac circuits. we simulate the performances of the set/mos hybrid 3-b adc and 2-b dac circuits by using the h-spice simulator. the simulation results demonstrate that the hybrid circuits can perform analog-digital and digital-analog data conversion well at room temperature. the hybrid adc and dac circuits have advantages as-follows: 1) compared with conventional circuits, the architectures of the circuits are simpler; 2) compared with single electron transistor circuits, the circuits have much larger load capability; 3) the power dissipation of the circuits are lower than uw; 4) the data conversion rate of the circuits can exceed 100 mhz; and 5) the resolution of the adc and dac circuits can be increased by the pipeline architectures. |
| WOS关键词 | CIRCUIT SIMULATION ; SET MODEL |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000233341100011 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426310 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ou, XB |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ou, XB,Wu, NJ. Analog-digital and digital-analog converters using single-electron and mos transistors[J]. Ieee transactions on nanotechnology,2005,4(6):722-729. |
| APA | Ou, XB,&Wu, NJ.(2005).Analog-digital and digital-analog converters using single-electron and mos transistors.Ieee transactions on nanotechnology,4(6),722-729. |
| MLA | Ou, XB,et al."Analog-digital and digital-analog converters using single-electron and mos transistors".Ieee transactions on nanotechnology 4.6(2005):722-729. |
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来源：半导体研究所
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