An improvement on si-etching tetramethyl ammonium hydroxide solution
文献类型：期刊论文
| 作者 | Yang, D; Yu, JZ; Chen, SW; Fan, ZC; Li, YT |
| 刊名 | Chinese journal of chemical engineering
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 13期号:1页码:48-50 |
| 关键词 | Silicon Silicon dioxide Tetramethyl ammonium hydroxide Etching rate |
| ISSN号 | 1004-9541 |
| 通讯作者 | Yu, jz() |
| 英文摘要 | An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (nh4)(2)s2o8, was achieved in this paper. for this etching solution, the etching rates of silicon and silicon dioxide were about 1.1 mu m(.)min(-1) and 0.5 nm(.)min(-1), respectively. the etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth. |
| WOS关键词 | SILICON |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Chemical |
| 语种 | 英语 |
| WOS记录号 | WOS:000227861600009 |
| 出版者 | CHEMICAL INDUSTRY PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426324 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yu, JZ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, D,Yu, JZ,Chen, SW,et al. An improvement on si-etching tetramethyl ammonium hydroxide solution[J]. Chinese journal of chemical engineering,2005,13(1):48-50. |
| APA | Yang, D,Yu, JZ,Chen, SW,Fan, ZC,&Li, YT.(2005).An improvement on si-etching tetramethyl ammonium hydroxide solution.Chinese journal of chemical engineering,13(1),48-50. |
| MLA | Yang, D,et al."An improvement on si-etching tetramethyl ammonium hydroxide solution".Chinese journal of chemical engineering 13.1(2005):48-50. |
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来源：半导体研究所
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