Growth of ge quantum dot mediated by boron on ge wetting layer
文献类型：期刊论文
| 作者 | Shi, WH; Li, CB; Luo, LP; Cheng, BW; Wang, QM |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 279期号:3-4页码:329-334 |
| 关键词 | Nanostructures Nucleation Chemical vapour deposition process Semiconducting germanium Semiconducting silicon |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.02.051 |
| 通讯作者 | Shi, wh(whshi@red.semi.ac.cn) |
| 英文摘要 | We, report on the influence of boron on the formation of ge quantum dots. the investigated structure consists of a ge wetting layer, on which a sub-monolayer boron is deposited and subsequently a ge top layer. for sufficiently thin ge top layers, the strain field induced by boron on ge wetting layer destabilizes the ge top layer and causes the formation of small ge quantum dots. however, for thicker ge top layers, boron on the ge wetting layer diffuses into ge layers, compensates partly the strain and delays the evolution of ge quantum dots. by this method, small ge quantum dots with high density as well as size uniformity can be formed by optimizing the growth condition. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | SUBMONOLAYER CARBON ; SB-SURFACTANT ; SI(100) ; SI(001) ; PHOTOLUMINESCENCE ; NUCLEATION ; SI |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000229686200013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426337 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, WH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, WH,Li, CB,Luo, LP,et al. Growth of ge quantum dot mediated by boron on ge wetting layer[J]. Journal of crystal growth,2005,279(3-4):329-334. |
| APA | Shi, WH,Li, CB,Luo, LP,Cheng, BW,&Wang, QM.(2005).Growth of ge quantum dot mediated by boron on ge wetting layer.Journal of crystal growth,279(3-4),329-334. |
| MLA | Shi, WH,et al."Growth of ge quantum dot mediated by boron on ge wetting layer".Journal of crystal growth 279.3-4(2005):329-334. |
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来源：半导体研究所
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