Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices
文献类型：期刊论文
| 作者 | Xu, B; Wang, ZG; Chen, YH; Jin, R; Ye, XL; Liu, FQ |
| 刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
 |
| 出版日期 | 2005 |
| 卷号 | 475-479页码:1783-1786 |
| 关键词 | Quantum dot Quantum-dot laser Self-assembled |
| ISSN号 | 0255-5476 |
| 通讯作者 | Xu, b(srex@red.semi.ac.cn) |
| 英文摘要 | This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. high-power, long-life quantum dots (qd) lasers emitting at similar to 1 mu m, red-emitting qd lasers, and long-wavelength qd lasers on gaas substrates have successfully been achieved by optimizing the growth conditions of qds. |
| WOS关键词 | DOTS ; LAYER |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227494702028 |
| 出版者 | TRANS TECH PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426398 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, B |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, B,Wang, ZG,Chen, YH,et al. Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1783-1786. |
| APA | Xu, B,Wang, ZG,Chen, YH,Jin, R,Ye, XL,&Liu, FQ.(2005).Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1783-1786. |
| MLA | Xu, B,et al."Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1783-1786. |
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来源：半导体研究所
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