中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices

文献类型:期刊论文

作者Xu, B; Wang, ZG; Chen, YH; Jin, R; Ye, XL; Liu, FQ
刊名Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
出版日期2005
卷号475-479页码:1783-1786
关键词Quantum dot Quantum-dot laser Self-assembled
ISSN号0255-5476
通讯作者Xu, b(srex@red.semi.ac.cn)
英文摘要This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. high-power, long-life quantum dots (qd) lasers emitting at similar to 1 mu m, red-emitting qd lasers, and long-wavelength qd lasers on gaas substrates have successfully been achieved by optimizing the growth conditions of qds.
WOS关键词DOTS ; LAYER
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000227494702028
出版者TRANS TECH PUBLICATIONS LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2426398
专题半导体研究所
通讯作者Xu, B
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xu, B,Wang, ZG,Chen, YH,et al. Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1783-1786.
APA Xu, B,Wang, ZG,Chen, YH,Jin, R,Ye, XL,&Liu, FQ.(2005).Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1783-1786.
MLA Xu, B,et al."Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1783-1786.

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来源:半导体研究所

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