Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices
文献类型:期刊论文
作者 | Xu, B; Wang, ZG; Chen, YH; Jin, R; Ye, XL; Liu, FQ |
刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
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出版日期 | 2005 |
卷号 | 475-479页码:1783-1786 |
关键词 | Quantum dot Quantum-dot laser Self-assembled |
ISSN号 | 0255-5476 |
通讯作者 | Xu, b(srex@red.semi.ac.cn) |
英文摘要 | This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. high-power, long-life quantum dots (qd) lasers emitting at similar to 1 mu m, red-emitting qd lasers, and long-wavelength qd lasers on gaas substrates have successfully been achieved by optimizing the growth conditions of qds. |
WOS关键词 | DOTS ; LAYER |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000227494702028 |
出版者 | TRANS TECH PUBLICATIONS LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426398 |
专题 | 半导体研究所 |
通讯作者 | Xu, B |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, B,Wang, ZG,Chen, YH,et al. Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1783-1786. |
APA | Xu, B,Wang, ZG,Chen, YH,Jin, R,Ye, XL,&Liu, FQ.(2005).Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1783-1786. |
MLA | Xu, B,et al."Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1783-1786. |
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来源:半导体研究所
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