As-doped p-type zno films by sputtering and thermal diffusion process
文献类型：期刊论文
| 作者 | Wang, Peng; Chen, Nuofu; Yin, Zhigang; Yang, Fei; Peng, Changtao; Dai, Ruixuan; Bai, Yiming |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2006-08-15 |
| 卷号 | 100期号:4页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2245192 |
| 通讯作者 | Wang, peng(pwang@semi.ac.cn) |
| 英文摘要 | As-doped p-type zno films were grown on gaas by sputtering and thermal diffusion process. hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. moreover, the hole concentration of as-doped p-type zno was very impressible to the oxygen ambient applied during the annealing process. in addition, the bonding state of as in the films was investigated by x-ray photoelectron spectroscopy. this study not only demonstrated an effective method for reliable and reproducible p-type zno fabrication but also helped to understand the doping mechanism of as-doped zno. (c) 2006 american institute of physics. |
| WOS关键词 | RAY-PHOTOELECTRON-SPECTROSCOPY ; INAS SURFACES ; FABRICATION ; DEPOSITION ; LAYERS ; OXIDE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000240236800053 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426565 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Peng |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Peng,Chen, Nuofu,Yin, Zhigang,et al. As-doped p-type zno films by sputtering and thermal diffusion process[J]. Journal of applied physics,2006,100(4):4. |
| APA | Wang, Peng.,Chen, Nuofu.,Yin, Zhigang.,Yang, Fei.,Peng, Changtao.,...&Bai, Yiming.(2006).As-doped p-type zno films by sputtering and thermal diffusion process.Journal of applied physics,100(4),4. |
| MLA | Wang, Peng,et al."As-doped p-type zno films by sputtering and thermal diffusion process".Journal of applied physics 100.4(2006):4. |
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来源：半导体研究所
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