Post-growth and in situ annealing on gainnas(sb) and their application in 1.55 mu m lasers
文献类型：期刊论文
| 作者 | Zhao, H; Xu, YQ; Ni, HQ; Zhang, SY; Han, Q; Du, Y; Yang, XH; Wu, RH; Niu, ZC |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 21期号:3页码:279-282 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/21/3/011 |
| 通讯作者 | Zhao, h(zhaohuan@red.semi.ac.cn) |
| 英文摘要 | Rapid thermal annealing (rta) has been demonstrated as an important way to improve the crystal quality of gainnas(sb)/gaas quantum wells. however little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. when a gaas-based laser is grown, algaas is usually used for cladding layers. the growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the gainnas(sb) active region, which affects the material quality. to investigate this effect, various post-growth annealing processes were performed to simulate this process. great enhancement of the pl intensity was obtained by a two-step process which consisted of annealing first at 700 degrees c for 60 s and then at 600 degrees c for 45 min. we transferred this post-growth annealing to in situ annealing. finally, a gainnassb laser was grown with a 700 degrees c in situ annealing process. continuous operation at room temperature of a gaas-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; IMPROVED LUMINESCENCE EFFICIENCY ; QUANTUM-WELLS ; ORIGIN |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000236590100013 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426568 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, H |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, H,Xu, YQ,Ni, HQ,et al. Post-growth and in situ annealing on gainnas(sb) and their application in 1.55 mu m lasers[J]. Semiconductor science and technology,2006,21(3):279-282. |
| APA | Zhao, H.,Xu, YQ.,Ni, HQ.,Zhang, SY.,Han, Q.,...&Niu, ZC.(2006).Post-growth and in situ annealing on gainnas(sb) and their application in 1.55 mu m lasers.Semiconductor science and technology,21(3),279-282. |
| MLA | Zhao, H,et al."Post-growth and in situ annealing on gainnas(sb) and their application in 1.55 mu m lasers".Semiconductor science and technology 21.3(2006):279-282. |
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来源：半导体研究所
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