Growth and annealing study of mg-doped algan and gan/algan superlattices
文献类型：期刊论文
| 作者 | Wang Bao-Zhu; Wang Xiao-Liang; Hu Guo-Xin; Ran Jun-Xue; Wang Xin-Hua; Guo Lun-Chun; Xiao Hong-Ling; Li Jian-Ping; Zeng Yi-Ping; Li Jin-Min |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2006-08-01 |
| 卷号 | 23期号:8页码:2187-2189 |
| ISSN号 | 0256-307X |
| 通讯作者 | Wang bao-zhu(wangbz@semi.ac.cn) |
| 英文摘要 | Mg-doped algan and gan/algan superlattice are grown by metalorganic chemical vapour deposition (mocvd). rapid thermal annealing (rta) treatments are carried out on the samples. hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. the results of hall measurements show that after annealing, the mg-doped algan sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 x 10(3) omega cm. however, with the same annealing treatment, the gan/algan superlattice sample has a hole concentration of 1.7 x 10(17) cm(-3) and of mg acceptors, which leads to higher hole concentration and lower p-type resistivity. |
| WOS关键词 | LIGHT-EMITTING-DIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000239365500062 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426593 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Bao-Zhu |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Bao-Zhu,Wang Xiao-Liang,Hu Guo-Xin,et al. Growth and annealing study of mg-doped algan and gan/algan superlattices[J]. Chinese physics letters,2006,23(8):2187-2189. |
| APA | Wang Bao-Zhu.,Wang Xiao-Liang.,Hu Guo-Xin.,Ran Jun-Xue.,Wang Xin-Hua.,...&Wang Zhan-Guo.(2006).Growth and annealing study of mg-doped algan and gan/algan superlattices.Chinese physics letters,23(8),2187-2189. |
| MLA | Wang Bao-Zhu,et al."Growth and annealing study of mg-doped algan and gan/algan superlattices".Chinese physics letters 23.8(2006):2187-2189. |
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来源：半导体研究所
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