Investigation of mn-doped si films prepared by magnetron cosputtering
文献类型:期刊论文
作者 | Liu, LF; Chen, NF; Wang, Y; Yin, ZG; Yang, F; Chai, CL; Zhang, X |
刊名 | Journal of crystal growth
![]() |
出版日期 | 2006-05-15 |
卷号 | 291期号:1页码:239-242 |
关键词 | Mn doping Magnetron sputtering Mnxsi1-x Diluted magnetic |
ISSN号 | 0022-0248 |
DOI | 10.1016/j.jcrysgro.2006.02.033 |
通讯作者 | Liu, lf(lfliu@ime.pku.edu.cn) |
英文摘要 | Mn-doped si films were prepared on si(001) substrates by magnetron cosputtering and post-annealing process. the structural, morphological and magnetic properties of the films have been investigated. x-ray diffraction results show that the as-prepared film is amorphous. by annealing at 800 degrees c, however, the film is crystallized. there is no secondary phase found except si in the two films. chemical mapping shows that no segregation of the mn atoms appears in the annealed film. atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. the field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | THIN-FILMS ; SPIN-PHOTONICS ; SEMICONDUCTORS ; GROWTH ; FERROMAGNETISM ; SPINTRONICS |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000237993900040 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426648 |
专题 | 半导体研究所 |
通讯作者 | Liu, LF |
作者单位 | 1.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, LF,Chen, NF,Wang, Y,et al. Investigation of mn-doped si films prepared by magnetron cosputtering[J]. Journal of crystal growth,2006,291(1):239-242. |
APA | Liu, LF.,Chen, NF.,Wang, Y.,Yin, ZG.,Yang, F.,...&Zhang, X.(2006).Investigation of mn-doped si films prepared by magnetron cosputtering.Journal of crystal growth,291(1),239-242. |
MLA | Liu, LF,et al."Investigation of mn-doped si films prepared by magnetron cosputtering".Journal of crystal growth 291.1(2006):239-242. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。