中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of mn-doped si films prepared by magnetron cosputtering

文献类型:期刊论文

作者Liu, LF; Chen, NF; Wang, Y; Yin, ZG; Yang, F; Chai, CL; Zhang, X
刊名Journal of crystal growth
出版日期2006-05-15
卷号291期号:1页码:239-242
关键词Mn doping Magnetron sputtering Mnxsi1-x Diluted magnetic
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2006.02.033
通讯作者Liu, lf(lfliu@ime.pku.edu.cn)
英文摘要Mn-doped si films were prepared on si(001) substrates by magnetron cosputtering and post-annealing process. the structural, morphological and magnetic properties of the films have been investigated. x-ray diffraction results show that the as-prepared film is amorphous. by annealing at 800 degrees c, however, the film is crystallized. there is no secondary phase found except si in the two films. chemical mapping shows that no segregation of the mn atoms appears in the annealed film. atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. the field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词THIN-FILMS ; SPIN-PHOTONICS ; SEMICONDUCTORS ; GROWTH ; FERROMAGNETISM ; SPINTRONICS
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000237993900040
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426648
专题半导体研究所
通讯作者Liu, LF
作者单位1.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Liu, LF,Chen, NF,Wang, Y,et al. Investigation of mn-doped si films prepared by magnetron cosputtering[J]. Journal of crystal growth,2006,291(1):239-242.
APA Liu, LF.,Chen, NF.,Wang, Y.,Yin, ZG.,Yang, F.,...&Zhang, X.(2006).Investigation of mn-doped si films prepared by magnetron cosputtering.Journal of crystal growth,291(1),239-242.
MLA Liu, LF,et al."Investigation of mn-doped si films prepared by magnetron cosputtering".Journal of crystal growth 291.1(2006):239-242.

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来源:半导体研究所

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