中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and structures of morphology-controlled zno nano- and microcrystals

文献类型:期刊论文

作者Peng, WQ; Qu, SC; Cong, GW; Wang, ZG
刊名Crystal growth & design
出版日期2006-06-01
卷号6期号:6页码:1518-1522
ISSN号1528-7483
DOI10.1021/cg0505261
通讯作者Peng, wq(wqpeng@semi.ac.cn)
英文摘要Zinc oxide flower-like bunches were directly synthesized on indium-doped tin oxide (ito) glass substrates through a simple chemical bath deposition process. by adjusting precursor concentration, other morphologies ( spindles and rods) were also obtained. all of them are hexagonal and single crystalline in nature and grow along the [ 0001] crystallographic direction. the possible growth mechanisms for these nano- and microcrystals were proposed. it was revealed that both the inherent highly anisotropic structure of zno and the precursor concentration play crucial roles in determining final morphologies of the products. in addition, vibrational properties of zno crystals with different morphologies were investigated by raman spectroscopy.
WOS关键词ROOM-TEMPERATURE ; ZINC-OXIDE ; LARGE-AREA ; GROWTH ; NANORODS ; ARRAY ; PHOTOLUMINESCENCE ; NANOSTRUCTURES ; EPITAXY ; ROUTE
WOS研究方向Chemistry ; Crystallography ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
语种英语
WOS记录号WOS:000238097300047
出版者AMER CHEMICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426653
专题半导体研究所
通讯作者Peng, WQ
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Peng, WQ,Qu, SC,Cong, GW,et al. Synthesis and structures of morphology-controlled zno nano- and microcrystals[J]. Crystal growth & design,2006,6(6):1518-1522.
APA Peng, WQ,Qu, SC,Cong, GW,&Wang, ZG.(2006).Synthesis and structures of morphology-controlled zno nano- and microcrystals.Crystal growth & design,6(6),1518-1522.
MLA Peng, WQ,et al."Synthesis and structures of morphology-controlled zno nano- and microcrystals".Crystal growth & design 6.6(2006):1518-1522.

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来源:半导体研究所

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