Origin of deep level defect related photoluminescence in annealed inp
文献类型：期刊论文
| 作者 | Zhao, Youwen; Dong, Zhiyuan; Miao, Shanshan; Deng, Aihong; Yang, Jun; Wang, Bo |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2006-12-15 |
| 卷号 | 100期号:12页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2404467 |
| 通讯作者 | Zhao, youwen(zhaoyw@red.semi.ac.cn) |
| 英文摘要 | Deep level defects in annealed inp have been studied by using photoluminescence spectroscopy (pl), thermally stimulated current (tsc), deep level transient spectroscopy (dlts), and positron annihilation lifetime (pal). a noticeable broad pl peak centered at 1.3 ev has been observed in the inp sample annealed in iron phosphide ambient. both the 1.3 ev pl emission and a defect at e-c-0.18 ev correlate with a divacancy detected in the annealed inp sample. the results make a divacancy defect and related property identified in the annealed inp. (c) 2006 american institute of physics. |
| WOS关键词 | DOPED SEMIINSULATING INP ; N-TYPE INP ; CONTROLLED PHOSPHORUS VAPOR ; POINT-DEFECTS ; FE ; SPECTROSCOPY ; TEMPERATURE ; VACANCIES ; CRYSTALS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000243157900038 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426696 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Youwen |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Sichuan Univ, Fac Sci, Dept Appl Phys, Chengdu 610065, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Youwen,Dong, Zhiyuan,Miao, Shanshan,et al. Origin of deep level defect related photoluminescence in annealed inp[J]. Journal of applied physics,2006,100(12):4. |
| APA | Zhao, Youwen,Dong, Zhiyuan,Miao, Shanshan,Deng, Aihong,Yang, Jun,&Wang, Bo.(2006).Origin of deep level defect related photoluminescence in annealed inp.Journal of applied physics,100(12),4. |
| MLA | Zhao, Youwen,et al."Origin of deep level defect related photoluminescence in annealed inp".Journal of applied physics 100.12(2006):4. |
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来源：半导体研究所
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