Characteristic of rapid thermal annealing on gain(n)(sb)as/gaas quantum well grown by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Zhao, H; Xu, YQ; Ni, HQ; Zhang, SY; Wu, DH; Han, Q; Wu, RH; Niu, ZC |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 99期号:3页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2164539 |
| 通讯作者 | Zhao, h(zhaohuan@red.semi.ac.cn) |
| 英文摘要 | Effect of rapid thermal annealing on photoluminescence (pl) properties of ingaas, inganas, ingaassb, and inganassb quantum wells (qws) grown by molecular-beam epitaxy was systematically investigated. variations of pl intensity and full width at half maximum were recorded from the samples annealed at different conditions. the pl peak intensities of ingaas and inganas qws initially increase and then decrease when the annealing temperature increased from 600 to 900 degrees c, but the drawing lines of ingaassb and inganassb take on an "m" shape. the enhancement of the pl intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. in the 800-900 degrees c high-temperature region, interdiffusion is likely the main factor influencing the pl intensity. in-n is easily formed during annealing which will prevent in out diffusion, so the largest blueshift was observed in ingaassb in the high-temperature region. (c) 2006 american institute of physics. |
| WOS关键词 | IMPROVED LUMINESCENCE EFFICIENCY ; OPTICAL-PROPERTIES ; LASERS ; NITROGEN ; ORIGIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000235341000085 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426752 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, H |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, H,Xu, YQ,Ni, HQ,et al. Characteristic of rapid thermal annealing on gain(n)(sb)as/gaas quantum well grown by molecular-beam epitaxy[J]. Journal of applied physics,2006,99(3):4. |
| APA | Zhao, H.,Xu, YQ.,Ni, HQ.,Zhang, SY.,Wu, DH.,...&Niu, ZC.(2006).Characteristic of rapid thermal annealing on gain(n)(sb)as/gaas quantum well grown by molecular-beam epitaxy.Journal of applied physics,99(3),4. |
| MLA | Zhao, H,et al."Characteristic of rapid thermal annealing on gain(n)(sb)as/gaas quantum well grown by molecular-beam epitaxy".Journal of applied physics 99.3(2006):4. |
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来源：半导体研究所
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