Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts
文献类型：期刊论文
| 作者 | Li Dong-Lin; Zeng Yi-Ping |
| 刊名 | Chinese physics
 |
| 出版日期 | 2006-11-01 |
| 卷号 | 15期号:11页码:2735-2741 |
| 关键词 | Two-dimensional electron gas High electron mobility transistor Self-consistent calculation Inalas/ingaas heterostructure |
| ISSN号 | 1009-1963 |
| 通讯作者 | Li dong-lin(ldl@red.semi.ac.cn) |
| 英文摘要 | We have carried out a theoretical study of double-delta-doped inalas/ingaas/inp high electron mobility transistor (hemt) by means of the finite differential method. the electronic states in the quantum well of the hemt are calculated self-consistently. instead of boundary conditions, initial conditions are used to solve the poisson equation. the concentration of two-dimensional electron gas (2deg) and its distribution in the hemt have been obtained. by changing the doping density of upper and lower impurity layers we find that the 2deg concentration confined in the channel is greatly affected by these two doping layers. but the electrons depleted by the schottky contact are hardly affected by the lower impurity layer. it is only related to the doping density of upper impurity layer. this means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped inalas/ingaas/inp hemts. |
| WOS关键词 | CHARGE CONTROL MODEL ; ELECTRON-MOBILITY TRANSISTORS ; PSEUDOMORPHIC INGAAS HEMT ; FIELD-EFFECT TRANSISTOR ; QUANTUM-WELL ; ALGAAS/INGAAS PHEMTS ; GATE RECESS ; HIGH-SPEED ; HETEROJUNCTION ; CHANNEL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000242215500046 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426803 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li Dong-Lin |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Dong-Lin,Zeng Yi-Ping. Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts[J]. Chinese physics,2006,15(11):2735-2741. |
| APA | Li Dong-Lin,&Zeng Yi-Ping.(2006).Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts.Chinese physics,15(11),2735-2741. |
| MLA | Li Dong-Lin,et al."Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts".Chinese physics 15.11(2006):2735-2741. |
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来源：半导体研究所
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