Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces
文献类型：期刊论文
| 作者 | Sun, G. S.; Liu, X. F.; Gong, Q. C.; Wang, L.; Zhao, W. S.; Li, J. Y.; Zeng, Y. P.; Li, J. M. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:275-278 |
| 关键词 | 4h-sic Homoepitaxial layers Surface morphological defect Optical microscopy |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2006.01.080 |
| 通讯作者 | Sun, g. s.(gshsun@red.semi.ac.cn) |
| 英文摘要 | The morphological defects and uniformity of 4h-sic epilayers grown by hot wall cvd at 1500 degrees c on off-oriented (0001) si faces are characterized by atomic force microscope, nomarski optical microscopy, and micro-raman spectroscopy. typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like sic epilayers. the preparation of the substrate surface is necessary for the growth of high-quality 4h-sic epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | SILICON-CARBIDE ; DISLOCATIONS ; FILMS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000238805900057 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426836 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, G. S. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, G. S.,Liu, X. F.,Gong, Q. C.,et al. Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces[J]. Materials science in semiconductor processing,2006,9(1-3):275-278. |
| APA | Sun, G. S..,Liu, X. F..,Gong, Q. C..,Wang, L..,Zhao, W. S..,...&Li, J. M..(2006).Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces.Materials science in semiconductor processing,9(1-3),275-278. |
| MLA | Sun, G. S.,et al."Morphological defects and uniformity issues of 4h-sic homoepitaxial layers grown on off-oriented (0001)si faces".Materials science in semiconductor processing 9.1-3(2006):275-278. |
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来源：半导体研究所
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