Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-gan schottky contacts
文献类型：期刊论文
| 作者 | Wang, R. X.; Xu, S. J.; Djurisic, A. B.; Beling, C. D.; Cheung, C. K.; Cheung, C. H.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-07-17 |
| 卷号 | 89期号:3页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2227627 |
| 通讯作者 | Xu, s. j.(sjxu@hkucc.hku.hk) |
| 英文摘要 | Indium-tin-oxide (ito)/n-gan schottky contacts were prepared by e-beam evaporation at 200 degrees c under various partial pressures of oxygen. x-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ito films. the results indicated that the observed variation in the reverse leakage current of the schottky contact and the optical transmittance of the ito films were strongly dependent on the quality of the ito film. the high concentration of point defects at the ito-gan interface is suggested to be responsible for the large observed leakage current of the ito/n-gan schottky contacts. (c) 2006 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; N-TYPE GAN ; ELECTRICAL-PROPERTIES ; BIAS LEAKAGE ; DIODES ; OXYGEN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000239174100109 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426841 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, S. J. |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, R. X.,Xu, S. J.,Djurisic, A. B.,et al. Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-gan schottky contacts[J]. Applied physics letters,2006,89(3):3. |
| APA | Wang, R. X..,Xu, S. J..,Djurisic, A. B..,Beling, C. D..,Cheung, C. K..,...&Tao, X. M..(2006).Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-gan schottky contacts.Applied physics letters,89(3),3. |
| MLA | Wang, R. X.,et al."Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-gan schottky contacts".Applied physics letters 89.3(2006):3. |
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来源：半导体研究所
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