中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy

文献类型:期刊论文

作者Wu, DH; Niu, ZC; Zhang, SY; Ni, HQ; He, ZH; Zhao, H; Peng, HL; Yang, XH; Han, Q; Wu, RH
刊名Chinese physics letters
出版日期2006-04-01
卷号23期号:4页码:1005-1008
ISSN号0256-307X
通讯作者Niu, zc(zcniu@red.semi.ac.cn)
英文摘要High (42.5%) indium content gainnas/gaas quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by radio frequency plasma nitrogen source assisted molecular beam epitaxy. the growth parameters of plasma power and n-2 how rate were optimized systematically to improve the material quality. photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m gainnas/gaas qws was kept as comparable as that in 1.31 mu m.
WOS关键词LASERS ; TEMPERATURE ; PHOTOLUMINESCENCE
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000236935000067
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2426861
专题半导体研究所
通讯作者Niu, ZC
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wu, DH,Niu, ZC,Zhang, SY,et al. Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy[J]. Chinese physics letters,2006,23(4):1005-1008.
APA Wu, DH.,Niu, ZC.,Zhang, SY.,Ni, HQ.,He, ZH.,...&Wu, RH.(2006).Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy.Chinese physics letters,23(4),1005-1008.
MLA Wu, DH,et al."Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy".Chinese physics letters 23.4(2006):1005-1008.

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来源:半导体研究所

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