Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy
文献类型:期刊论文
作者 | Wu, DH; Niu, ZC; Zhang, SY; Ni, HQ; He, ZH; Zhao, H; Peng, HL; Yang, XH; Han, Q; Wu, RH |
刊名 | Chinese physics letters
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出版日期 | 2006-04-01 |
卷号 | 23期号:4页码:1005-1008 |
ISSN号 | 0256-307X |
通讯作者 | Niu, zc(zcniu@red.semi.ac.cn) |
英文摘要 | High (42.5%) indium content gainnas/gaas quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by radio frequency plasma nitrogen source assisted molecular beam epitaxy. the growth parameters of plasma power and n-2 how rate were optimized systematically to improve the material quality. photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m gainnas/gaas qws was kept as comparable as that in 1.31 mu m. |
WOS关键词 | LASERS ; TEMPERATURE ; PHOTOLUMINESCENCE |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000236935000067 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426861 |
专题 | 半导体研究所 |
通讯作者 | Niu, ZC |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wu, DH,Niu, ZC,Zhang, SY,et al. Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy[J]. Chinese physics letters,2006,23(4):1005-1008. |
APA | Wu, DH.,Niu, ZC.,Zhang, SY.,Ni, HQ.,He, ZH.,...&Wu, RH.(2006).Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy.Chinese physics letters,23(4),1005-1008. |
MLA | Wu, DH,et al."Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy".Chinese physics letters 23.4(2006):1005-1008. |
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来源:半导体研究所
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