中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of inas deposition. thickness on the structural and optical properties of inas quantum wires

文献类型:期刊论文

作者Wang, Yuanli; Cui, Hua; Lei, Wen; Su, Yahong; Chen, Yonghai; Wu, Ju; Wang, Zhanguo
刊名Journal of university of science and technology beijing
出版日期2007-08-01
卷号14期号:4页码:341-344
关键词Quantum wire Molecular beam epitaxy Optical proper-ties Nanostructures Transmission electron microscope
ISSN号1005-8850
通讯作者Wang, yuanli(yuanli.wang@axt.com)
英文摘要The influence of inas deposition thickness on the structural and optical properties of inas/inalas quantum wires (qwr) superlattices (sls) was studied. the transmission electron microscopy (tem) results show that with increasing the inas deposited thickness, the size uniformity and spatial ordering of inas qwr sls was greatly improved, but threading dislocations initiated from inas nanowires for the sample with 6 monolayers (mls) inas deposition. in addition, the zig-zag features along the extending direction and lateral interlink of inas nanowires were also observed. the inas nanowires, especially for the first period, were laterally compact. these structural features may result in easy tunneling and coupling of charge carriers between inas nanowires and will hamper their device applications to some extent. some suggestions are put forward for further improving the uniformity of the stacked inas qwrs, and for suppressing the formation of the threading dislocations in inas qwr sls.
WOS关键词LAYER-ORDERING ORIENTATION ; NANOWIRES ; INP(001) ; ARRAYS
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering ; Mining & Mineral Processing
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Mining & Mineral Processing
语种英语
WOS记录号WOS:000249473400011
出版者JOURNAL OF UNIV OF SCIENCE AND TECHNOLOGY BEIJING
URI标识http://www.irgrid.ac.cn/handle/1471x/2426901
专题半导体研究所
通讯作者Wang, Yuanli
作者单位1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
3.China Met Informat & Standardizat Res Inst, Beijing 100730, Peoples R China
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GB/T 7714
Wang, Yuanli,Cui, Hua,Lei, Wen,et al. Influence of inas deposition. thickness on the structural and optical properties of inas quantum wires[J]. Journal of university of science and technology beijing,2007,14(4):341-344.
APA Wang, Yuanli.,Cui, Hua.,Lei, Wen.,Su, Yahong.,Chen, Yonghai.,...&Wang, Zhanguo.(2007).Influence of inas deposition. thickness on the structural and optical properties of inas quantum wires.Journal of university of science and technology beijing,14(4),341-344.
MLA Wang, Yuanli,et al."Influence of inas deposition. thickness on the structural and optical properties of inas quantum wires".Journal of university of science and technology beijing 14.4(2007):341-344.

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来源:半导体研究所

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