Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique
文献类型：期刊论文
| 作者 | Bao Zhi-Hua; Jing Wei-Ping; Luo Xiang-Dong; Tan Ping-Heng |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-07-01 |
| 卷号 | 56期号:7页码:4213-4217 |
| 关键词 | Semi-insulated gaas Micro-photoluminescence Spin-orbit split-off valence band |
| ISSN号 | 1000-3290 |
| 通讯作者 | Bao zhi-hua() |
| 英文摘要 | Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 ev above the bandgap of gaas (e-0). by analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the e-0 + delta(0) bandgap in semi-insulated gaas, which was further verified by raman results. the observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the e-0 + delta(0) energy level were very similar to those from the e-0 of gaas. this mainly resulted from the common conduction band around gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk gaas were mainly determined by the intrinsic properties of the conduction band. our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials. |
| WOS关键词 | RAMAN-SCATTERING ; SEMICONDUCTORS ; SPECTROSCOPY ; ALLOYS ; GAP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000248134500095 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426927 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bao Zhi-Hua |
| 作者单位 | 1.Nantong Univ, Jiangsu Prov Key Lab ASIC Design, Nantong 226007, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bao Zhi-Hua,Jing Wei-Ping,Luo Xiang-Dong,et al. Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique[J]. Acta physica sinica,2007,56(7):4213-4217. |
| APA | Bao Zhi-Hua,Jing Wei-Ping,Luo Xiang-Dong,&Tan Ping-Heng.(2007).Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique.Acta physica sinica,56(7),4213-4217. |
| MLA | Bao Zhi-Hua,et al."Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique".Acta physica sinica 56.7(2007):4213-4217. |
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来源：半导体研究所
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