Pseudospin in si delta-doped inalas/ingaas/inalas single quantum well
文献类型：期刊论文
| 作者 | Zhou, W. Z.; Huang, Z. M.; Qiu, Z. J.; Lin, T.; Shang, L. Y.; Li, D. L.; Gao, H. L.; Cui, L. J.; Zeng, Y. P.; Guo, S. L. |
| 刊名 | Solid state communications
 |
| 出版日期 | 2007-05-01 |
| 卷号 | 142期号:7页码:393-397 |
| 关键词 | Quantum wells Electronic transport Tunnelling |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2007.03.014 |
| 通讯作者 | Chu, j. h.(jhchu@mail.sitp.ac.cn) |
| 英文摘要 | Magneto-transport measurements have been carried out on double/single-barrier-doped in0.52al0.48as/in0.53ga0.47as/in0.52al0.48as quantum well samples from 1.5 to 60 k in an applied magnetic field up to 13 t. beating shubnikov-de haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. the energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. for the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. the pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 elsevier ltd. all rights reserved. |
| WOS关键词 | INTERSUBBAND SCATTERING ; TRANSPORT-PROPERTIES ; SPIN INJECTION ; ELECTRON-GAS ; HETEROSTRUCTURES ; SUBBAND ; HETEROJUNCTIONS ; SPECTROSCOPY ; TRANSISTOR ; FIELD |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000246815800007 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426937 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chu, J. H. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Guangxi, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 4.E China Normal Univ, SITP Joint Lab Imaging Informat, Shanghai 200062, Peoples R China 5.Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, W. Z.,Huang, Z. M.,Qiu, Z. J.,et al. Pseudospin in si delta-doped inalas/ingaas/inalas single quantum well[J]. Solid state communications,2007,142(7):393-397. |
| APA | Zhou, W. Z..,Huang, Z. M..,Qiu, Z. J..,Lin, T..,Shang, L. Y..,...&Chu, J. H..(2007).Pseudospin in si delta-doped inalas/ingaas/inalas single quantum well.Solid state communications,142(7),393-397. |
| MLA | Zhou, W. Z.,et al."Pseudospin in si delta-doped inalas/ingaas/inalas single quantum well".Solid state communications 142.7(2007):393-397. |
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来源：半导体研究所
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