Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Hao, Ruiting; Xu, Yingqiang; Zhou, Zhiqiang; Ren, Zhengwei; Ni, Haiqiao; He, Zhenhong; Niu, Zhichuan |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2007-02-21 |
| 卷号 | 40期号:4页码:1080-1084 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/40/4/025 |
| 通讯作者 | Niu, zhichuan(zcniu@red.semi.ac.cn) |
| 英文摘要 | Gasb 1 mu m-thick layers were grown by molecular beam epitaxy on gaas (001). the effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray diffraction, atomic force microscopy, hall measurement and photoluminescence spectroscopy, respectively. it was found that the surface roughness and hole mobility are highly dependent on the antimony-to-gallium flux ratios and growth temperatures. the crystalline quality, electrical properties and optical properties of gasb layers were also studied as functions of growth rate, and it was found that a suitably low growth rate is beneficial for the crystalline quality and electrical and optical properties. better crystal quality gasb layers with a minimum root mean square surface roughness of 0.1 nm and good optical properties were obtained at a growth rate of 0.25 mu m h(-1). |
| WOS关键词 | INFRARED PHOTODIODES ; DETECTORS ; SUPERLATTICES ; GAAS(001) ; LONG ; HALL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000245274300026 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426943 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, Zhichuan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao, Ruiting,Xu, Yingqiang,Zhou, Zhiqiang,et al. Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy[J]. Journal of physics d-applied physics,2007,40(4):1080-1084. |
| APA | Hao, Ruiting.,Xu, Yingqiang.,Zhou, Zhiqiang.,Ren, Zhengwei.,Ni, Haiqiao.,...&Niu, Zhichuan.(2007).Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy.Journal of physics d-applied physics,40(4),1080-1084. |
| MLA | Hao, Ruiting,et al."Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy".Journal of physics d-applied physics 40.4(2007):1080-1084. |
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来源：半导体研究所
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