Simulation of in0.65ga0.35n single-junction solar cell
文献类型：期刊论文
| 作者 | Zhang, Xiaobin; Wang, Xiaoliang; Xiao, Hongling; Yang, Cuibai; Ran, Junxue; Wang, Cuimei; Hou, Qifeng; Li, Jinmin |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2007-12-07 |
| 卷号 | 40期号:23页码:7335-7338 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/40/23/013 |
| 通讯作者 | Zhang, xiaobin(xbzhang@semi.ac.cn) |
| 英文摘要 | The performances of in0.65ga0.35n single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. it is found that the optimum efficiency of a in0.65ga0.35n solar cell is 20.284% with 5 x 10(17) cm(-3) carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer. |
| WOS关键词 | BAND-GAP ; INN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000251797900023 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427005 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Xiaobin |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xiaobin,Wang, Xiaoliang,Xiao, Hongling,et al. Simulation of in0.65ga0.35n single-junction solar cell[J]. Journal of physics d-applied physics,2007,40(23):7335-7338. |
| APA | Zhang, Xiaobin.,Wang, Xiaoliang.,Xiao, Hongling.,Yang, Cuibai.,Ran, Junxue.,...&Li, Jinmin.(2007).Simulation of in0.65ga0.35n single-junction solar cell.Journal of physics d-applied physics,40(23),7335-7338. |
| MLA | Zhang, Xiaobin,et al."Simulation of in0.65ga0.35n single-junction solar cell".Journal of physics d-applied physics 40.23(2007):7335-7338. |
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来源：半导体研究所
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