机构

• 半导体研究所 [13]
• 金属研究所 [11]

采集方式

• OAI收割 [14]
• iSwitch采集 [10]

内容类型

• 期刊论文 [23]
• 会议论文 [1]

发表日期

• 2011 [18]
• 2008 [4]
• 2007 [2]

学科主题

• 半导体材料 [3]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文  iSwitch采集 Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文  OAI收割 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/02/02 Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文  iSwitch采集 Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721 作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai 收藏  |  浏览/下载：173/0  |  提交时间：2019/05/12 Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  Algan alloys   Effect of high temperature algan buffer thickness on gan epilayer grown on si(111) substrates 期刊论文  iSwitch采集 Journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei   |  收藏  |  浏览/下载：1/0  |  提交时间：2021/02/02 Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei   |  收藏  |  浏览/下载：3/0  |  提交时间：2021/02/02 Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei   |  收藏  |  浏览/下载：5/0  |  提交时间：2021/02/02 Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721 作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai   |  收藏  |  浏览/下载：43/0  |  提交时间：2021/02/02 Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys   Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721 作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai   |  收藏  |  浏览/下载：7/0  |  提交时间：2021/02/02 Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys   Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3 作者:  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12