Fabrication, morphology and photoluminescence properties of gan nanowires
文献类型：期刊论文
| 作者 | Zhuang, Huizhao; Xue, Shoubin |
| 刊名 | European physical journal-applied physics
 |
| 出版日期 | 2007-06-01 |
| 卷号 | 38期号:3页码:243-246 |
| ISSN号 | 1286-0042 |
| DOI | 10.1051/epjap:2007096 |
| 通讯作者 | Zhuang, huizhao(zhuanghuizhao@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires were successfully synthesized on si(111) substrates by ammoniating the ga2o3/zno films at 900 degrees c. the structure, morphology and optical property of the as-prepared gan nanowires were studied by x-ray diffraction (xrd), scanning electron microscopy (sem), field-emission transmission electron microscope (fetem), fourier transform infrared spectrum (ftir) and fluorescence spectrophotometer. the results show that the gan nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm. the representative photoluminescence spectrum at room temperature exhibited a strong emission peak at 374.1 nm and two weak emission peaks at 437.4 nm and 473.3 nm. finally, the growth mechanism is also briefly discussed. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GALLIUM NITRIDE ; STRUCTURAL-PROPERTIES ; OPTICAL-PROPERTIES ; EXCESS CARBON ; SIC FILMS ; GROWTH ; ABSORPTION ; NANOTUBES ; NANORODS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000247671500009 |
| 出版者 | EDP SCIENCES S A |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427053 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, Huizhao |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, Huizhao,Xue, Shoubin. Fabrication, morphology and photoluminescence properties of gan nanowires[J]. European physical journal-applied physics,2007,38(3):243-246. |
| APA | Zhuang, Huizhao,&Xue, Shoubin.(2007).Fabrication, morphology and photoluminescence properties of gan nanowires.European physical journal-applied physics,38(3),243-246. |
| MLA | Zhuang, Huizhao,et al."Fabrication, morphology and photoluminescence properties of gan nanowires".European physical journal-applied physics 38.3(2007):243-246. |
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来源：半导体研究所
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