Novel hybrid voltage controlled ring oscillators using single electron and mos transistors
文献类型：期刊论文
| 作者 | Zhang, Wancheng; Wu, Nan-Jian; Hashizume, Tamotsu; Kasai, Seiya |
| 刊名 | Ieee transactions on nanotechnology
 |
| 出版日期 | 2007-03-01 |
| 卷号 | 6期号:2页码:146-157 |
| 关键词 | Hybrid Metal-oxide-semiconductor (mos) Single electron transistor (set) Spice Voltage controlled oscillator (vco) |
| ISSN号 | 1536-125X |
| DOI | 10.1109/tnano.2007.891817 |
| 通讯作者 | Zhang, wancheng(zhangwc@red.semi.ac.cn) |
| 英文摘要 | This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (vco) using a single electron transistor (set) and metal-oxide-semiconductor (mos) transistor. the novel set/mos hybrid vco circuits possess the merits of both the set circuit and the mos circuit. the novel vco circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. we use the spice compact macro model to describe the set and simulate the performances of the set/mos hybrid vco circuits by hspice simulator. simulation results demonstrate that the hybrid circuits can operate well as a vco at room temperature. the oscillation frequency of the vco circuits could be as high as 1 ghz, with a -71 dbc/hz phase noise at 1 mhz offset frequency. the power dissipations are lower than 2 uw. we studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits. |
| WOS关键词 | MULTIPLE-VALUED LOGIC ; COULOMB-BLOCKADE ; SETMOS ARCHITECTURE ; CIRCUITS ; NOISE ; JUNCTIONS ; DEVICES ; MEMORY ; PHASE ; MODEL |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000245109100002 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427070 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Wancheng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruc, Beijing 100083, Peoples R China 2.Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, Wancheng,Wu, Nan-Jian,Hashizume, Tamotsu,et al. Novel hybrid voltage controlled ring oscillators using single electron and mos transistors[J]. Ieee transactions on nanotechnology,2007,6(2):146-157. |
| APA | Zhang, Wancheng,Wu, Nan-Jian,Hashizume, Tamotsu,&Kasai, Seiya.(2007).Novel hybrid voltage controlled ring oscillators using single electron and mos transistors.Ieee transactions on nanotechnology,6(2),146-157. |
| MLA | Zhang, Wancheng,et al."Novel hybrid voltage controlled ring oscillators using single electron and mos transistors".Ieee transactions on nanotechnology 6.2(2007):146-157. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。