Photovoltaic effects in ingan structures with p-n junctions
文献类型：期刊论文
| 作者 | Yang, Cuibai; Wang, Xiaoliang; Xiao, Hongling; Ran, Junxue; Wang, Cuimei; Hu, Guoxin; Wang, Xinhua; Zhang, Xiaobin; Li, Manping; Li, Jinmin |
| 刊名 | Physica status solidi a-applications and materials science
 |
| 出版日期 | 2007-12-01 |
| 卷号 | 204期号:12页码:4288-4291 |
| ISSN号 | 1862-6300 |
| 通讯作者 | Yang, cuibai(cbyang@semi.ac.en) |
| 英文摘要 | Ingan photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. using double-crystal x-ray diffraction measurements, it was found that the room temperature band gaps of p-ingan and n-ingan films were 2.7 and 2.8 ev, respectively. values of 3.4 x 10(-2) ma cm(-2) short-circuit current, 0.43 v open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a schottky barrier and many defects of the p-ingan film. 2007 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| WOS关键词 | FUNDAMENTAL-BAND GAP ; IN1-XGAXN ALLOYS ; INN |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | WILEY-BLACKWELL |
| WOS记录号 | WOS:000252309600079 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427105 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Cuibai |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Cuibai,Wang, Xiaoliang,Xiao, Hongling,et al. Photovoltaic effects in ingan structures with p-n junctions[J]. Physica status solidi a-applications and materials science,2007,204(12):4288-4291. |
| APA | Yang, Cuibai.,Wang, Xiaoliang.,Xiao, Hongling.,Ran, Junxue.,Wang, Cuimei.,...&Li, Jinmin.(2007).Photovoltaic effects in ingan structures with p-n junctions.Physica status solidi a-applications and materials science,204(12),4288-4291. |
| MLA | Yang, Cuibai,et al."Photovoltaic effects in ingan structures with p-n junctions".Physica status solidi a-applications and materials science 204.12(2007):4288-4291. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。