Electroluminescence from nano-crystalline si/sio2 structures embedded in pn junctions
文献类型：期刊论文
| 作者 | Chen, D. Y.1,2; Wang, X.1,2; Wei, D. Y.1,2; Wang, T.1,2; Xu, J.1,2; Ma, Z. Y.1,2; Li, W.1,2; Chen, K. J.1,2; Shi, W. H.3; Wang, Q. M.3 |
| 刊名 | Superlattices and microstructures
 |
| 出版日期 | 2008-08-01 |
| 卷号 | 44期号:2页码:160-165 |
| 关键词 | Pecvd Electroluminescence P-i-n structures |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2008.04.002 |
| 通讯作者 | Xu, j.(junxu@nju.edu.cn) |
| 英文摘要 | Phosphorous-doped and boron-doped amorphous si thin films as well as amorphous sio2/si/sio2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. then, the p-i-n structures containing nano-crystalline si/sio2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. the turn-on voltages can be reduced to 3 v for samples prepared on heavily doped p-type si (p(+)-si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type si (p-si) and ito glass substrates. the improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline si/sio2 system. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING DIODE ; SILICON ; NANOCRYSTALS ; PLASMA |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000258811700004 |
| 出版者 | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427302 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, J. |
| 作者单位 | 1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, D. Y.,Wang, X.,Wei, D. Y.,et al. Electroluminescence from nano-crystalline si/sio2 structures embedded in pn junctions[J]. Superlattices and microstructures,2008,44(2):160-165. |
| APA | Chen, D. Y..,Wang, X..,Wei, D. Y..,Wang, T..,Xu, J..,...&Wang, Q. M..(2008).Electroluminescence from nano-crystalline si/sio2 structures embedded in pn junctions.Superlattices and microstructures,44(2),160-165. |
| MLA | Chen, D. Y.,et al."Electroluminescence from nano-crystalline si/sio2 structures embedded in pn junctions".Superlattices and microstructures 44.2(2008):160-165. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。