中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Theoretical design and performance of inxga1-xn two-junction solar cells

文献类型:期刊论文

作者Zhang, Xiaobin1,2; Wang, Xiaoliang1,2; Xiao, Hongling1; Yang, Cuibai1; Ran, Junxue1; Wang, Cuimei1; Hou, Qifeng1; Li, Jinmin1; Wang, Zhanguo2
刊名Journal of physics d-applied physics
出版日期2008-12-21
卷号41期号:24页码:6
ISSN号0022-3727
DOI10.1088/0022-3727/41/24/245104
通讯作者Zhang, xiaobin(xbzhang@semi.ac.cn)
英文摘要The efficiencies of inxga1-xn two-junction solar cells are calculated with various bandgap combinations of subcells under am1.5 global, am1.5 direct and am0 spectra. the influence of top-cell thickness on efficiency has been studied and the performance of inxga1-xn cells for the maximum light concentration of various spectra has been evaluated. under one-sun irradiance, the optimum efficiency is 35.1% for the am1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 ev/1.15 ev. and the limiting efficiency is 40.9% for the highest light concentration of the am1.5 global spectrum, with the top/bottom cell bandgap as 1.72 ev/1.12 ev.
WOS关键词IN1-XGAXN ALLOYS ; BAND-GAP ; IRRADIANCE ; SINGLE ; INN
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000261383700011
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427319
专题半导体研究所
通讯作者Zhang, Xiaobin
作者单位1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Xiaobin,Wang, Xiaoliang,Xiao, Hongling,et al. Theoretical design and performance of inxga1-xn two-junction solar cells[J]. Journal of physics d-applied physics,2008,41(24):6.
APA Zhang, Xiaobin.,Wang, Xiaoliang.,Xiao, Hongling.,Yang, Cuibai.,Ran, Junxue.,...&Wang, Zhanguo.(2008).Theoretical design and performance of inxga1-xn two-junction solar cells.Journal of physics d-applied physics,41(24),6.
MLA Zhang, Xiaobin,et al."Theoretical design and performance of inxga1-xn two-junction solar cells".Journal of physics d-applied physics 41.24(2008):6.

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来源:半导体研究所

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