Growth temperature dependences of inn films grown by mocvd
文献类型：期刊论文
| 作者 | Yang, Cuibai1; Wang, Xiaoliang1,2; Xiao, Hongling1; Zhang, Xiaobin1; Hua, Guoxin1; Ran, Junxue1; Wang, Cuimei1; Li, Jianping1; Li, Jinmin1; Wang, Zhanguo2 |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-12-30 |
| 卷号 | 255期号:5页码:3149-3152 |
| 关键词 | Inn Mocvd Mobility |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2008.09.013 |
| 通讯作者 | Yang, cuibai(cbyang@semi.ac.cn) |
| 英文摘要 | We investigate the growth temperature dependences of inn films grown by metal organic chemical vapor deposition (mocvd). experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the inn layer. the increasing growth temperature broadened the v scan's full-width at half-maximum (fwhm) and roughened the surface morphology; whereas the electrical properties improved: as the temperature increased from 460 degrees c to 560 degrees c, room-temperature hall mobility increased from 98 cm(2)/v s to nearly 800 cm(2)/v s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). the higher growth temperature resulted in more efficient cracking of nh(3), which improved hall mobility and decreased carrier concentration. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | FUNDAMENTAL-BAND GAP ; EPITAXY |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000261299200102 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427415 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Cuibai |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Cuibai,Wang, Xiaoliang,Xiao, Hongling,et al. Growth temperature dependences of inn films grown by mocvd[J]. Applied surface science,2008,255(5):3149-3152. |
| APA | Yang, Cuibai.,Wang, Xiaoliang.,Xiao, Hongling.,Zhang, Xiaobin.,Hua, Guoxin.,...&Wang, Zhanguo.(2008).Growth temperature dependences of inn films grown by mocvd.Applied surface science,255(5),3149-3152. |
| MLA | Yang, Cuibai,et al."Growth temperature dependences of inn films grown by mocvd".Applied surface science 255.5(2008):3149-3152. |
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来源：半导体研究所
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