High-frequency characterization of packaging network in to-can photodiode modules
文献类型：期刊论文
| 作者 | Zhu, N. H.1; Wen, J. M.1; Zhang, S. J.2 |
| 刊名 | Microwave and optical technology letters
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 50期号:5页码:1219-1223 |
| 关键词 | Equivalent circuits Scattering-parameters measurement Test fixture calibration Photodiode Through hole (to) packaging |
| ISSN号 | 0895-2477 |
| DOI | 10.1002/mop.23356 |
| 通讯作者 | Zhu, n. h.(nhzhu@semi.ac.cn) |
| 英文摘要 | A simple method for analyzing the effects of to packaging network on the high-frequency response of photodiode modules is presented. this method is established based on the relations of the scattering parameters of the packaging network, photodiode chip, and module. it is shown that the results obtained by this method agree well with those obtained by the conventional comparison method. the proposed method is much more convenient since only the electrical domain measurements are required. (c) 2008 wiley periodicals, inc. |
| WOS关键词 | LASER |
| WOS研究方向 | Engineering ; Optics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000255081700026 |
| 出版者 | JOHN WILEY & SONS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427423 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, N. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Opetoelect, Beijing 100083, Peoples R China 2.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, N. H.,Wen, J. M.,Zhang, S. J.. High-frequency characterization of packaging network in to-can photodiode modules[J]. Microwave and optical technology letters,2008,50(5):1219-1223. |
| APA | Zhu, N. H.,Wen, J. M.,&Zhang, S. J..(2008).High-frequency characterization of packaging network in to-can photodiode modules.Microwave and optical technology letters,50(5),1219-1223. |
| MLA | Zhu, N. H.,et al."High-frequency characterization of packaging network in to-can photodiode modules".Microwave and optical technology letters 50.5(2008):1219-1223. |
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来源：半导体研究所
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