Distinct two dimensional lateral ordering of self-assembled quantum dots
文献类型:期刊论文
作者 | Ma, W. Q.; Sun, Y. W.; Yang, X. J.; Jiang, D. S.; Chen, L. H. |
刊名 | Physica e-low-dimensional systems & nanostructures
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出版日期 | 2008-04-01 |
卷号 | 40期号:6页码:1952-1954 |
关键词 | Lateral ordering Quantum dots Molecular beam epitaxy |
ISSN号 | 1386-9477 |
DOI | 10.1016/j.physe.2007.09.201 |
通讯作者 | Ma, w. q.(wqma@semi.ac.cn) |
英文摘要 | We report a quantum dot (qd) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. such a distinct lateral ordering of qds is achieved on a planar gaas(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the qds. the analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. the ordered dots demonstrate strong photoluminescence (pl) emission at room temperature (rt) and the full width at half maximum of pl peak at rt is only 50 mev. (c) 2007 elsevier b.v. all rights reserved. |
WOS研究方向 | Science & Technology - Other Topics ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000255717400054 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427435 |
专题 | 半导体研究所 |
通讯作者 | Ma, W. Q. |
作者单位 | Chinese Acad Sci, Inst Semicond, Lab NanoOptoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Ma, W. Q.,Sun, Y. W.,Yang, X. J.,et al. Distinct two dimensional lateral ordering of self-assembled quantum dots[J]. Physica e-low-dimensional systems & nanostructures,2008,40(6):1952-1954. |
APA | Ma, W. Q.,Sun, Y. W.,Yang, X. J.,Jiang, D. S.,&Chen, L. H..(2008).Distinct two dimensional lateral ordering of self-assembled quantum dots.Physica e-low-dimensional systems & nanostructures,40(6),1952-1954. |
MLA | Ma, W. Q.,et al."Distinct two dimensional lateral ordering of self-assembled quantum dots".Physica e-low-dimensional systems & nanostructures 40.6(2008):1952-1954. |
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来源:半导体研究所
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