中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Distinct two dimensional lateral ordering of self-assembled quantum dots

文献类型:期刊论文

作者Ma, W. Q.; Sun, Y. W.; Yang, X. J.; Jiang, D. S.; Chen, L. H.
刊名Physica e-low-dimensional systems & nanostructures
出版日期2008-04-01
卷号40期号:6页码:1952-1954
关键词Lateral ordering Quantum dots Molecular beam epitaxy
ISSN号1386-9477
DOI10.1016/j.physe.2007.09.201
通讯作者Ma, w. q.(wqma@semi.ac.cn)
英文摘要We report a quantum dot (qd) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. such a distinct lateral ordering of qds is achieved on a planar gaas(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the qds. the analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. the ordered dots demonstrate strong photoluminescence (pl) emission at room temperature (rt) and the full width at half maximum of pl peak at rt is only 50 mev. (c) 2007 elsevier b.v. all rights reserved.
WOS研究方向Science & Technology - Other Topics ; Physics
WOS类目Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000255717400054
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427435
专题半导体研究所
通讯作者Ma, W. Q.
作者单位Chinese Acad Sci, Inst Semicond, Lab NanoOptoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Ma, W. Q.,Sun, Y. W.,Yang, X. J.,et al. Distinct two dimensional lateral ordering of self-assembled quantum dots[J]. Physica e-low-dimensional systems & nanostructures,2008,40(6):1952-1954.
APA Ma, W. Q.,Sun, Y. W.,Yang, X. J.,Jiang, D. S.,&Chen, L. H..(2008).Distinct two dimensional lateral ordering of self-assembled quantum dots.Physica e-low-dimensional systems & nanostructures,40(6),1952-1954.
MLA Ma, W. Q.,et al."Distinct two dimensional lateral ordering of self-assembled quantum dots".Physica e-low-dimensional systems & nanostructures 40.6(2008):1952-1954.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。