Mocvd growth of inn using a gan buffer
文献类型：期刊论文
| 作者 | Wang, L. L.; Wang, H.; Chen, J.; Sun, X.; Zhu, J. J.; Jiang, D. S.; Yang, H.; Liang, J. W. |
| 刊名 | Superlattices and microstructures
 |
| 出版日期 | 2008-02-01 |
| 卷号 | 43期号:2页码:81-85 |
| 关键词 | Surface X-ray diffraction Electrical properties Metalorganic chemical vapour deposition Inn |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2007.06.008 |
| 通讯作者 | Wang, l. l.(wangll@red.semi.ac.cn) |
| 英文摘要 | We have investigated mocvd growth of inn oil sapphire with and without a gan buffer between 490 and 520 degrees c. the buffer significantly improves the surface morphological uniformity and electrical properties of inn epilayers. characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. below 520 degrees c, increasing temperature improves structural quality but degrades electrical properties. hall data from this study suggest that v-n-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. we believe that reducing carrier concentration and dislocation density is effective to increase the hall mobility of inn. (c) 2007 elsevier ltd. all rights reserved. |
| WOS关键词 | EPITAXY ; ENERGY ; DONOR |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000258520300002 |
| 出版者 | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427446 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, L. L. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, L. L.,Wang, H.,Chen, J.,et al. Mocvd growth of inn using a gan buffer[J]. Superlattices and microstructures,2008,43(2):81-85. |
| APA | Wang, L. L..,Wang, H..,Chen, J..,Sun, X..,Zhu, J. J..,...&Liang, J. W..(2008).Mocvd growth of inn using a gan buffer.Superlattices and microstructures,43(2),81-85. |
| MLA | Wang, L. L.,et al."Mocvd growth of inn using a gan buffer".Superlattices and microstructures 43.2(2008):81-85. |
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来源：半导体研究所
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