Hillocks and hexagonal pits in a thick film grown by hvpe
文献类型:期刊论文
作者 | Wei, T. B.; Duan, R. F.; Wang, J. X.; Li, J. M.; Huo, Z. Q.; Zeng, Y. P. |
刊名 | Microelectronics journal
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出版日期 | 2008-12-01 |
卷号 | 39期号:12页码:1556-1559 |
关键词 | Gan Hvpe Hillocks Pits Cathodoluminescence |
ISSN号 | 0026-2692 |
DOI | 10.1016/j.mejo.2008.02.024 |
通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
英文摘要 | A gan film with a thickness of 250 mu m was grown on a gan/sapphire template in a vertical hydride vapor phase epitaxy (hvpe) reactor. the full-width at half-maximum (fwhm) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. a sharp band-edge emission with a fwhm of 20 mev at 50 k was observed, which corresponded to good crystalline quality of the film. some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. the strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 elsevier ltd. all rights reserved. |
WOS关键词 | GAN LAYERS ; BOUNDARIES ; NANOPIPES ; SI(111) ; EPITAXY ; DOMAIN ; BLUE |
WOS研究方向 | Engineering ; Science & Technology - Other Topics |
WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
语种 | 英语 |
WOS记录号 | WOS:000261647800032 |
出版者 | ELSEVIER SCI LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427469 |
专题 | 半导体研究所 |
通讯作者 | Wei, T. B. |
作者单位 | Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, T. B.,Duan, R. F.,Wang, J. X.,et al. Hillocks and hexagonal pits in a thick film grown by hvpe[J]. Microelectronics journal,2008,39(12):1556-1559. |
APA | Wei, T. B.,Duan, R. F.,Wang, J. X.,Li, J. M.,Huo, Z. Q.,&Zeng, Y. P..(2008).Hillocks and hexagonal pits in a thick film grown by hvpe.Microelectronics journal,39(12),1556-1559. |
MLA | Wei, T. B.,et al."Hillocks and hexagonal pits in a thick film grown by hvpe".Microelectronics journal 39.12(2008):1556-1559. |
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来源:半导体研究所
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