中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hillocks and hexagonal pits in a thick film grown by hvpe

文献类型:期刊论文

作者Wei, T. B.; Duan, R. F.; Wang, J. X.; Li, J. M.; Huo, Z. Q.; Zeng, Y. P.
刊名Microelectronics journal
出版日期2008-12-01
卷号39期号:12页码:1556-1559
关键词Gan Hvpe Hillocks Pits Cathodoluminescence
ISSN号0026-2692
DOI10.1016/j.mejo.2008.02.024
通讯作者Wei, t. b.(tbwei@semi.ac.cn)
英文摘要A gan film with a thickness of 250 mu m was grown on a gan/sapphire template in a vertical hydride vapor phase epitaxy (hvpe) reactor. the full-width at half-maximum (fwhm) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. a sharp band-edge emission with a fwhm of 20 mev at 50 k was observed, which corresponded to good crystalline quality of the film. some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. the strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 elsevier ltd. all rights reserved.
WOS关键词GAN LAYERS ; BOUNDARIES ; NANOPIPES ; SI(111) ; EPITAXY ; DOMAIN ; BLUE
WOS研究方向Engineering ; Science & Technology - Other Topics
WOS类目Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
语种英语
WOS记录号WOS:000261647800032
出版者ELSEVIER SCI LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427469
专题半导体研究所
通讯作者Wei, T. B.
作者单位Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wei, T. B.,Duan, R. F.,Wang, J. X.,et al. Hillocks and hexagonal pits in a thick film grown by hvpe[J]. Microelectronics journal,2008,39(12):1556-1559.
APA Wei, T. B.,Duan, R. F.,Wang, J. X.,Li, J. M.,Huo, Z. Q.,&Zeng, Y. P..(2008).Hillocks and hexagonal pits in a thick film grown by hvpe.Microelectronics journal,39(12),1556-1559.
MLA Wei, T. B.,et al."Hillocks and hexagonal pits in a thick film grown by hvpe".Microelectronics journal 39.12(2008):1556-1559.

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来源:半导体研究所

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