Effects of the sputtering time of zno buffer layer on the quality of gan thin films
文献类型：期刊论文
| 作者 | Xue, Shoubin1; Zhang, Xing1; Huang, Ru1; Zhuang, Huizhao2 |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-08-30 |
| 卷号 | 254期号:21页码:6766-6769 |
| 关键词 | Gan films Zno buffer layers Sputtering time |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2008.04.083 |
| 通讯作者 | Xue, shoubin(xueshoubin-pku@163.com) |
| 英文摘要 | Zno thin films with different thickness (the sputtering time of zno buffer layers was 10 min, 15 min, 20 min, and 25 min, respectively) were first prepared on si substrates using radio frequency magnetron sputtering system and then the samples were annealed at 900 degrees c in oxygen ambient. subsequently, a gan epilayer about 500 nm thick was deposited on zno buffer layer. the gan/zno films were annealed in nh(3) ambient at 950 degrees c. x-ray diffraction (xrd), atom force microscopy (afm), x-ray photoelectron spectroscopy (xps) and photoluminescence (pl) were used to analyze the structure, morphology, composition and optical properties of gan films. the results show that their properties are investigated particularly as a function of the sputtering time of zno layers. for the better growth of gan films, the optimal sputtering time is 15 min. (c) 2008 elsevier b. v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; TIN OXIDE-FILMS ; NITRIDE ; GROWTH ; TEMPERATURE ; DIODES |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000258997700013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427490 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Shoubin |
| 作者单位 | 1.Peking Univ, Inst Microelect, SOI Grp, Beijing 100871, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. Effects of the sputtering time of zno buffer layer on the quality of gan thin films[J]. Applied surface science,2008,254(21):6766-6769. |
| APA | Xue, Shoubin,Zhang, Xing,Huang, Ru,&Zhuang, Huizhao.(2008).Effects of the sputtering time of zno buffer layer on the quality of gan thin films.Applied surface science,254(21),6766-6769. |
| MLA | Xue, Shoubin,et al."Effects of the sputtering time of zno buffer layer on the quality of gan thin films".Applied surface science 254.21(2008):6766-6769. |
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来源：半导体研究所
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