First principle study of mg, si and mn co-doped gan
文献类型：期刊论文
| 作者 | Xing Hai-Ying1; Fan Guang-Han1; Zhang Yong1; Zhao De-Gang2 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2009 |
| 卷号 | 58期号:1页码:450-458 |
| 关键词 | Mg, si and mn co-doped gan Electronic structure T(c) Optical properties |
| ISSN号 | 1000-3290 |
| 通讯作者 | Fan guang-han(gfan@scnu.edu.cn) |
| 英文摘要 | Calculations of electronic structures and optical properties of mg (or si) and mn co-doped gan were carried out by means of first-principle plane-wave pesudopotential (pwp) based on density functional theory - the spin polarized impurity bands of deep energy levels were found for both systems. they are half metallic and suitable for spin injectors. compared with gan: mn, gan: mn-mg exhibits a significant increase in t(c) 1 while the 1.3 ev absorption peak in gan: mn disappears due to addition of mg. in addition, a strong absorption peak due to (4)t(1) (f) -> (4)t(2) (f) transition of mn(4+) were observed near 1.1 ev. nevertheless, gan: mn-si failed to show increase of t(c), and the absorption peak was not observed at the low energy side. |
| WOS关键词 | MOLECULAR-BEAM-EPITAXY ; OPTICAL-PROPERTIES ; MAGNETIC SEMICONDUCTORS ; ELECTRONIC-STRUCTURE ; 1ST-PRINCIPLES ; GAMNN ; FERROMAGNETISM ; ACCEPTOR ; ZNO |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000262834300070 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427510 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fan Guang-Han |
| 作者单位 | 1.S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China 2.China Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xing Hai-Ying,Fan Guang-Han,Zhang Yong,et al. First principle study of mg, si and mn co-doped gan[J]. Acta physica sinica,2009,58(1):450-458. |
| APA | Xing Hai-Ying,Fan Guang-Han,Zhang Yong,&Zhao De-Gang.(2009).First principle study of mg, si and mn co-doped gan.Acta physica sinica,58(1),450-458. |
| MLA | Xing Hai-Ying,et al."First principle study of mg, si and mn co-doped gan".Acta physica sinica 58.1(2009):450-458. |
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来源：半导体研究所
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