Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers
文献类型:期刊论文
作者 | Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Ni, H. Q.; Xu, Y. Q.; Niu, Z. C. |
刊名 | Journal of nanoscience and nanotechnology
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出版日期 | 2009-02-01 |
卷号 | 9期号:2页码:1333-1336 |
关键词 | Inas quantum dots Metamorphic buffer Molecular beam epitaxy |
ISSN号 | 1533-4880 |
DOI | 10.1166/jnn.2009.c150 |
通讯作者 | Wu, b. p.() |
英文摘要 | In this work, inas quantum dots (qds) grown on a linear graded ingaas metamorphic buffer layer by molecular beam epitaxy have been investigated. the growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (afm). inas qds were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (pl). the effects of post-growth rapid thermal annealing (rta) on the optical properties of the inas qds were investigated. after the rta, the pl peak of the qds was blue-shifted and the full width at half maximum decreased. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; LASERS ; TEMPERATURE ; PERFORMANCE ; RANGE ; WELLS |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000263653300150 |
出版者 | AMER SCIENTIFIC PUBLISHERS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427600 |
专题 | 半导体研究所 |
通讯作者 | Wu, B. P. |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wu, B. P.,Wu, D. H.,Xiong, Y. H.,et al. Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers[J]. Journal of nanoscience and nanotechnology,2009,9(2):1333-1336. |
APA | Wu, B. P..,Wu, D. H..,Xiong, Y. H..,Huang, S. S..,Ni, H. Q..,...&Niu, Z. C..(2009).Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers.Journal of nanoscience and nanotechnology,9(2),1333-1336. |
MLA | Wu, B. P.,et al."Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers".Journal of nanoscience and nanotechnology 9.2(2009):1333-1336. |
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来源:半导体研究所
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