中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers

文献类型:期刊论文

作者Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Ni, H. Q.; Xu, Y. Q.; Niu, Z. C.
刊名Journal of nanoscience and nanotechnology
出版日期2009-02-01
卷号9期号:2页码:1333-1336
关键词Inas quantum dots Metamorphic buffer Molecular beam epitaxy
ISSN号1533-4880
DOI10.1166/jnn.2009.c150
通讯作者Wu, b. p.()
英文摘要In this work, inas quantum dots (qds) grown on a linear graded ingaas metamorphic buffer layer by molecular beam epitaxy have been investigated. the growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (afm). inas qds were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (pl). the effects of post-growth rapid thermal annealing (rta) on the optical properties of the inas qds were investigated. after the rta, the pl peak of the qds was blue-shifted and the full width at half maximum decreased.
WOS关键词MOLECULAR-BEAM EPITAXY ; LASERS ; TEMPERATURE ; PERFORMANCE ; RANGE ; WELLS
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000263653300150
出版者AMER SCIENTIFIC PUBLISHERS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427600
专题半导体研究所
通讯作者Wu, B. P.
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
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GB/T 7714
Wu, B. P.,Wu, D. H.,Xiong, Y. H.,et al. Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers[J]. Journal of nanoscience and nanotechnology,2009,9(2):1333-1336.
APA Wu, B. P..,Wu, D. H..,Xiong, Y. H..,Huang, S. S..,Ni, H. Q..,...&Niu, Z. C..(2009).Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers.Journal of nanoscience and nanotechnology,9(2),1333-1336.
MLA Wu, B. P.,et al."Long-wavelength emission inas quantum dots grown on ingaas metamorphic buffers".Journal of nanoscience and nanotechnology 9.2(2009):1333-1336.

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来源:半导体研究所

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