Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | Wei, T. B.; Hu, Q.; Duan, R. F.; Wei, X. C.; Huo, Z. Q.; Wang, J. X.; Zeng, Y. P.; Wang, G. H.; Li, J. M. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2009-08-15 |
| 卷号 | 311期号:17页码:4153-4157 |
| 关键词 | Hrxrd Pl Stacking fault Hvpe Gan Semipolar |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2009.06.058 |
| 通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
| 英文摘要 | The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar gan directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (hvpe) were investigated. it was found that the increase of v/iii ratio led to high quality (10 (1) over bar(3) over bar) oriented gan epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. after etching in the mixed acids, the inclined pyramids dominated the gan surface with a density of 2 x 10(5) cm(-2), revealing the n-polarity characteristic. in the low-temperature pl spectra, weak bsf-related emission at 3.44ev could be observed as a shoulder of donor-bound exciton lines for the epilayer at high v/iii ratio, which was indicative of obvious reduction of bsfs density. in comparison with other defect related emissions, a different quenching behavior was found for the 3.29 ev emission, characterized by the temperature-dependent pl measurement. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; FREESTANDING GAN ; GALLIUM NITRIDE ; RECOMBINATION ; FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000269992200001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427641 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, T. B. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, T. B.,Hu, Q.,Duan, R. F.,et al. Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy[J]. Journal of crystal growth,2009,311(17):4153-4157. |
| APA | Wei, T. B..,Hu, Q..,Duan, R. F..,Wei, X. C..,Huo, Z. Q..,...&Li, J. M..(2009).Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy.Journal of crystal growth,311(17),4153-4157. |
| MLA | Wei, T. B.,et al."Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy".Journal of crystal growth 311.17(2009):4153-4157. |
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来源：半导体研究所
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