Short period inas/gasb superlattice infrared detector on gaas substrates
文献类型：期刊论文
| 作者 | Guo Jie1,2; Peng Zhen-Yu2; Lu Zheng-Xiong2; Sun Wei-Guo1,2; Hao Rui-Ting3; Zhou Zhi-Qiang3; Xu Ying-Qiang3; Niu Zhi-Chuan3 |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2009-06-01 |
| 卷号 | 28期号:3页码:165-+ |
| 关键词 | Superlattice Inas/gasb infrared detector Molecular-beam epitaxy (mbe) Spectral response |
| ISSN号 | 1001-9014 |
| 通讯作者 | Guo jie() |
| 英文摘要 | Two type ii superlattices (sls) : inas(2ml)/gasb(8ml) and inas(8ml)/gasb(8ml) were grown on gaas substrates by molecular-beam epitaxy. high resolution x-ray diffraction showed the periods of the two sls were 31.2 angstrom and 57.3 angstrom, respectively. room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1 mu m and 5 mu m for the two sls. the swir and mwir photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. the spectral response and blackbody tests were carried out at low and room temperatues. the results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 mu m and 5.0 mu m respectively and d(bb)* is above 2 x 10(8) cmhz(1/2)/w for two kinds of photoconductors at 77k. d(bb)* is above 10(8) cmhz(1/2)/w for swir photoconductor at room temperature. |
| WOS关键词 | GROWTH |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000267776000002 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427710 |
| 专题 | 半导体研究所 |
| 通讯作者 | Guo Jie |
| 作者单位 | 1.NW Polytech Univ, Sch Mat, Xian 710072, Peoples R China 2.Luoyang Optoelecctron Inst, Luoyang 471009, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo Jie,Peng Zhen-Yu,Lu Zheng-Xiong,et al. Short period inas/gasb superlattice infrared detector on gaas substrates[J]. Journal of infrared and millimeter waves,2009,28(3):165-+. |
| APA | Guo Jie.,Peng Zhen-Yu.,Lu Zheng-Xiong.,Sun Wei-Guo.,Hao Rui-Ting.,...&Niu Zhi-Chuan.(2009).Short period inas/gasb superlattice infrared detector on gaas substrates.Journal of infrared and millimeter waves,28(3),165-+. |
| MLA | Guo Jie,et al."Short period inas/gasb superlattice infrared detector on gaas substrates".Journal of infrared and millimeter waves 28.3(2009):165-+. |
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来源：半导体研究所
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