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High efficiency passively q-switched mode-locking nd:gdvo4 laser with lt-in0.25ga0.75as saturable absorber

文献类型:期刊论文

作者Pan, S. D.1; Zhao, L. N.1; Yuan, Y.1; Zhu, S. N.1; He, J. L.2; Wang, Y. G.3
刊名Optical materials
出版日期2009-06-01
卷号31期号:8页码:1215-1217
关键词Semiconductor saturable absorber Q-switch Mode lock Nd:gdvo4
ISSN号0925-3467
DOI10.1016/j.optmat.2009.01.004
通讯作者Pan, s. d.(psd66zx@163.com)
英文摘要The generation of passively q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped nd:gdvo4 laser with a low temperature in0.25ga0.75as saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. the repetition rate and pulse duration of the mode-locked pulses concentrated in the q-switch envelop were 455 mhz and 12 ps, respectively. the average output power was 1.8 w and the slope efficiency was 36%. (c) 2009 elsevier b.v. all rights reserved.
WOS关键词PUMPED ND-GDVO4 LASER ; OUTPUT POWER ; MIRROR
WOS研究方向Materials Science ; Optics
WOS类目Materials Science, Multidisciplinary ; Optics
语种英语
WOS记录号WOS:000267259000020
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427735
专题半导体研究所
通讯作者Pan, S. D.
作者单位1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
2.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China
推荐引用方式
GB/T 7714
Pan, S. D.,Zhao, L. N.,Yuan, Y.,et al. High efficiency passively q-switched mode-locking nd:gdvo4 laser with lt-in0.25ga0.75as saturable absorber[J]. Optical materials,2009,31(8):1215-1217.
APA Pan, S. D.,Zhao, L. N.,Yuan, Y.,Zhu, S. N.,He, J. L.,&Wang, Y. G..(2009).High efficiency passively q-switched mode-locking nd:gdvo4 laser with lt-in0.25ga0.75as saturable absorber.Optical materials,31(8),1215-1217.
MLA Pan, S. D.,et al."High efficiency passively q-switched mode-locking nd:gdvo4 laser with lt-in0.25ga0.75as saturable absorber".Optical materials 31.8(2009):1215-1217.

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来源:半导体研究所

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