High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time
文献类型：期刊论文
| 作者 | Xu Xue-Jun; Chen Shao-Wu; Xu Hai-Hua; Sun Yang; Yu Yu-De; Yu Jin-Zhong; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2009-09-01 |
| 卷号 | 18期号:9页码:3900-3904 |
| 关键词 | Silicon-on-insulator Electro-optic switch Plasma dispersion effect Switch time |
| ISSN号 | 1674-1056 |
| 通讯作者 | Xu xue-jun(xjxu@semi.ac.cn) |
| 英文摘要 | A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a mach-zehnder interferometer (mzi) based on a submicron rib waveguide and the electrical structure of a pin diode on silicon-on-insulator (soi). the switch behaviour is achieved through the plasma dispersion effect of silicon. the device has a modulation arm of i mm in length and cross-section of 400 nmx340 nm. the measurement results show that the switch has a v(pi)l(pi) figure of merit of 0.145 v-cm and the extinction ratios of two output ports and cross talk are 40 db, 28 db and -28 db, respectively. a 3 db modulation bandwidth of 90 mhz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated. |
| WOS关键词 | MACH-ZEHNDER MODULATOR ; ON-INSULATOR ; WAVE-GUIDE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000269578700047 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427749 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu Xue-Jun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu Xue-Jun,Chen Shao-Wu,Xu Hai-Hua,et al. High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time[J]. Chinese physics b,2009,18(9):3900-3904. |
| APA | Xu Xue-Jun.,Chen Shao-Wu.,Xu Hai-Hua.,Sun Yang.,Yu Yu-De.,...&Wang Qi-Ming.(2009).High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time.Chinese physics b,18(9),3900-3904. |
| MLA | Xu Xue-Jun,et al."High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time".Chinese physics b 18.9(2009):3900-3904. |
入库方式： iSwitch采集
来源：半导体研究所
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