Solid source mbe growth of quantum cascade lasers
文献类型：期刊论文
| 作者 | Liu, Feng-Qi; Li, Lu; Wang, Lijun; Liu, Junqi; Zhang, Wei; Zhang, Quande; Liu, Wanfeng; Lu, Quanyong; Wang, Zhanguo |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2009-11-01 |
| 卷号 | 97期号:3页码:527-532 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-009-5423-8 |
| 通讯作者 | Liu, feng-qi(fqliu@red.semi.ac.cn) |
| 英文摘要 | High material quality is the basis of quantum cascade lasers (qcls). here we report the solid source molecular beam epitaxy (mbe) growth details of realizing high quality of ingaas/inalas qcl structures. accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. double crystal x-ray diffraction discloses that our grown qcl structures possess excellent periodicity and sharp interfaces. high quality laser wafers are grown in a single epitaxial run. room temperature continuous-wave (cw) operation of qcls is demonstrated. |
| WOS关键词 | CONTINUOUS-WAVE OPERATION ; ROOM-TEMPERATURE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000271480300003 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427750 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, Feng-Qi |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Feng-Qi,Li, Lu,Wang, Lijun,et al. Solid source mbe growth of quantum cascade lasers[J]. Applied physics a-materials science & processing,2009,97(3):527-532. |
| APA | Liu, Feng-Qi.,Li, Lu.,Wang, Lijun.,Liu, Junqi.,Zhang, Wei.,...&Wang, Zhanguo.(2009).Solid source mbe growth of quantum cascade lasers.Applied physics a-materials science & processing,97(3),527-532. |
| MLA | Liu, Feng-Qi,et al."Solid source mbe growth of quantum cascade lasers".Applied physics a-materials science & processing 97.3(2009):527-532. |
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来源：半导体研究所
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