Formation of high reflective ni/ag/ti/au contact on p-gan
文献类型：期刊论文
| 作者 | Jiang, Fang1,2,3; Cai, Li-E1,2,3; Zhang, Jiang-Yong1,2,3,4; Zhang, Bao-Ping1,2,3 |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2010-07-01 |
| 卷号 | 42期号:9页码:2420-2423 |
| 关键词 | High reflective P-gan Aes Optimal conditions |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2010.05.027 |
| 通讯作者 | Zhang, bao-ping(bzhang@xmu.edu.cn) |
| 英文摘要 | A metallization scheme of ni/ag/ti/au has been developed for obtaining high reflective contacts on p-type gan. in order to find optimal conditions to get a high reflectivity, we studied samples with various ni thicknesses, annealing temperatures and annealing times. by annealing at 500 degrees c for 5 min in an o(2) ambient, a reflectivity as high as 94% was obtained from ni/ag/ti/au (1/120/120/50 nm). the effects of ti layers on the suppression of ag agglomeration were investigated by using auger electron spectroscopy (aes). from aes depth profiles, it is clear that ti acts as a diffusion barrier to prevent au atoms from diffusing into the ag layer, which is important in the formation of high reflectivity. crown copyright (c) 2010 published by elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; OHMIC CONTACTS ; LOW-RESISTANCE ; TI/AL/TI/AU |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000280897700040 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427810 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Bao-Ping |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Fujian, Peoples R China 2.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China 3.Xiamen Univ, Pen Tung Sah Micro Nano Technol Res Ctr, Xiamen 361005, Fujian, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, Fang,Cai, Li-E,Zhang, Jiang-Yong,et al. Formation of high reflective ni/ag/ti/au contact on p-gan[J]. Physica e-low-dimensional systems & nanostructures,2010,42(9):2420-2423. |
| APA | Jiang, Fang,Cai, Li-E,Zhang, Jiang-Yong,&Zhang, Bao-Ping.(2010).Formation of high reflective ni/ag/ti/au contact on p-gan.Physica e-low-dimensional systems & nanostructures,42(9),2420-2423. |
| MLA | Jiang, Fang,et al."Formation of high reflective ni/ag/ti/au contact on p-gan".Physica e-low-dimensional systems & nanostructures 42.9(2010):2420-2423. |
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来源：半导体研究所
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