中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetoresistance in a nominally undoped ingan thin film

文献类型:期刊论文

作者Ding, K.1,2; Zeng, Y. P.1,2,3; Li, Y. Y.2; Cui, L. J.2; Wang, J. X.3; Lu, H. X.3; Cong, P. P.3
刊名Applied physics a-materials science & processing
出版日期2010-04-01
卷号99期号:1页码:63-66
ISSN号0947-8396
DOI10.1007/s00339-009-5497-3
通讯作者Ding, k.(dingkai@red.semi.ac.cn)
英文摘要The magnetotransport properties of a nominally undoped ingan thin film grown by metal-organic chemical vapor deposition were investigated. resistivity was measured under a magnetic field up to 5 t over the temperature range of 3 to 298 k. the film exhibits a negative magnetoresistance at low temperatures. its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 k. the negative component was described by a model proposed by khosla and fischer for spin scattering of carriers in an impurity band. the positive part was attributed to the effect of lorentz force on the carrier motion. agreement between the model and the data is presented.
WOS关键词NEGATIVE MAGNETORESISTANCE ; DIODES
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000276069900009
出版者SPRINGER
URI标识http://www.irgrid.ac.cn/handle/1471x/2427863
专题半导体研究所
通讯作者Ding, K.
作者单位1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Novel Mat Ctr, Inst Semicond, Beijing 100083, Peoples R China
3.Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Ding, K.,Zeng, Y. P.,Li, Y. Y.,et al. Magnetoresistance in a nominally undoped ingan thin film[J]. Applied physics a-materials science & processing,2010,99(1):63-66.
APA Ding, K..,Zeng, Y. P..,Li, Y. Y..,Cui, L. J..,Wang, J. X..,...&Cong, P. P..(2010).Magnetoresistance in a nominally undoped ingan thin film.Applied physics a-materials science & processing,99(1),63-66.
MLA Ding, K.,et al."Magnetoresistance in a nominally undoped ingan thin film".Applied physics a-materials science & processing 99.1(2010):63-66.

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来源:半导体研究所

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